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FDH3595
FDH3595
DO-35
High Conductance Low Leakage Diode
Sourced from Process 1M. See MMBD1501-1505 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Value Units
WIV
Working Inverse Voltage 125 V
IO
Average Rectified Current 200 mA
IF
DC Forward Current 500 mA
if
Recurrent Peak Forward Current 600 mA
if(surge)
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
1.0
4.0
A
A
Tstg
Storage Temperature Range -65 to +175
°C
TJ
Operating Junction Temperature 175
°C
Symbol Characteristic Max Units
MMBD7000*
PD
Total Device Dissipation
Derate above 25°C
500
3.33
mW
mW/°C
RθJA
Thermal Resistance, Junction to Ambient 300
°C/W
Discrete POWER & Signal
Technologies
?1997 Fairchild Semiconductor Corporation
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